c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2011 www. ruichips .com ru1h l 1 3 l p - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage - 100 v gss gate - source voltage 2 0 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuou s forward current t c =25 c - 13 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c - 52 a t c =25 c - 13 i d continuous drain current t c =100 c - 9 a t c =25 c 50 p d maximum power dissipation t c =100 c 25 w r q jc thermal resistance - junction to case 3 c /w drain - source avalanche ratings e as avala nche energy, single pulsed 56 m j ? - 100 v/ - 1 3 a, r ds ( on ) = 160 m ( tpy.)@ v gs = - 10v r ds ( on ) = 180 m ( tpy.)@ v gs = - 4.5 v ? super high dense cell design ? esd protected ? reliable and rugged ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? power management ? dc/dc converters absolute maximum ratings p - channel mosfe t to252
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2011 2 www. ruichips .com ru1h l 1 3 l electrical characteristics ( t c =25 c unless otherwise noted) ru1h l 1 3 l symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sou rce breakdown voltage v gs =0v, i ds = - 250 m a - 100 v v ds = - 100 v, v gs =0v - 1 i dss zero gate voltage drain current t j =85 c - 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds = - 250 m a - 1.5 - 2 - 2.7 v i gss gate leakage current v gs = 16 v, v ds =0v 10 m a v gs = - 10 v, i ds = - 8 a 160 180 m w r ds ( on ) drain - source on - state resistance v gs = - 4.5 v, i ds = - 6 a 180 210 m w notes : pulse width limited by safe operating area. limited by t jmax , i as = 15 a, v dd = - 48 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guarantee d by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = - 1 a, v gs =0v - 1. 2 v t rr reverse recovery time 35 ns q rr reverse recovery charge i sd = - 1 3 a, dl sd /dt=100a/ m s 65 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.8 w c iss input capacitance 1 840 c oss output capacitance 2 70 c rss reverse transfer capacitance v gs =0v, v ds = - 50 v, frequency=1.0mhz 1 40 pf t d ( on ) turn - on delay time 1 3 t r turn - on rise time 1 6 t d ( off ) turn - off delay time 31 t f turn - off fall time v dd = - 50 v, r l = 3.8 w , i ds = - 1 3 a, v gen = - 10v, r g = 6 w 1 8 ns gate charge characteristics q g total gate charge 2 8 q gs gate - source charge 9 q gd gate - drain charge v ds = - 80 v, v gs = - 10v, i ds = - 1 3 a 10 nc
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2011 3 www. ruichips .com ru1h l 1 3 l typical characteristics power dissipation drain current p tot - power ( w) - i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance - i d - drain current (a) normalized effective transient - v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2011 4 www. ruichips .com ru1h l 1 3 l typical characteris tics output characteristics drain - source on resistance - i d - drain current (a) r ds(on) - on resistance ( m ) - v ds - drain - source voltage (v) - i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage - v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2011 5 www. ruichips .com ru1h l 1 3 l typical characteristics drain - source on resistance s ource - drain diode forward normalized on resistance - i s - source current (a) t j - junction temperature (c) - v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) - v gs - gate - source voltage (v) - v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2011 6 www. ruichips .com ru1h l 1 3 l avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2011 7 www. ruichips .com ru1h l 1 3 l ordering and marking information ru1h l 1 3 package (available) l : to252 operating temperature range c : - 55 to 1 75 oc assembly material g : green & lead free packaging t : tube tr : tape & r eel
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2011 8 www. ruichips .com ru1h l 1 3 l package information to252 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 2.200 2.400 0.087 0.094 l 9.800 10.400 0.386 0.409 a1 0.000 0.127 0.000 0.005 l1 2.900 ref. 0.114 ref. b 0.660 0.8 60 0.026 0.034 l2 1.400 1.700 0.055 0.067 c 0.460 0.580 0.018 0.023 l3 1.600 ref. 0.063ref. d 6.500 6.700 0.256 0.264 l4 0.600 1.000 0.024 0.039 d1 5.100 5.460 0.201 0.215 1.100 1.300 0.043 0.051 d2 4.830 ref. 0.190 ref. 0 8 0 8 e 6.000 6.200 0.236 0.244 h 0.000 0.300 0.000 0.012 e 2.186 2.386 0.086 0.094 v 5.350 ref. 0.211 ref.
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2011 9 www. ruichips .com ru1h l 1 3 l customer service worldwide sales and service : sales@ru i chips.co m technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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